Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition
نویسندگان
چکیده
منابع مشابه
Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor
Ruthenium thin films are deposited by atomic layer deposition (ALD) from bis(N,N’-di-tert-butylacetamidinato)ruthenium(II) dicarbonyl and O2. Highly conductive, dense, and pure thin films can be deposited when oxygen exposure, EO, approaches a certain threshold (Emax). When EO>Emax the film peels off due to the recombinative desorption of O2 at the film/substrate interface. Analysis by atomic p...
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We report a method for producing thin, completely continuous and highly conductive copper films conformally inside very narrow holes with aspect ratios over 35:1 by atomic layer deposition ALD . Pure copper thin films were grown from a novel copper I amidinate precursor, copper I N,N -di-sec-butylacetamidinate, and molecular hydrogen gas as the reducing agent. This copper precursor is a liquid ...
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A novel atomic layer deposition process for the preparation of fluoride thin films in a temperature range of 225 degrees C-400 degrees C is introduced. The crystallinity, morphology, composition, thicknesses, refractive indices, and transmittance of the films are analyzed. Low impurity levels are obtained at 350 degrees C-400 degrees C with good stoichiometry. Refractive indices of 1.34-1.42 fo...
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A calculalion modcl to study alornic layer dcposifiorl (A1 ,I)) in low-pressure charinel-type CVI) rcactor with many par;illcl suhstrattrs is dcscrihccl. 'I'hc calcul;ltions are based on continuity equation and kinetic equation For su~facc covelagc Iiormation o r : L stc;%dy-statc :~d:;orption wavc propagating bctwccn the substrates during a precursor pulse is str~dicd. l 'hc effect of diffusi(...
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ژورنال
عنوان ژورنال: Journal of Materials Chemistry C
سال: 2021
ISSN: 2050-7526,2050-7534
DOI: 10.1039/d0tc03910a